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BSZ900N20NS3GATMA1 - Infineon

Description: MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3

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BSZ900N20NS3GATMA1 Details

  • Manufacturer Part Number:

    BSZ900N20NS3GATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN, PLASTIC, TSDSON-8

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    15.2 A

  • Drain-source On Resistance-Max:

    0.09 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    61 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSZ900N20NS3GATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSZ900N20NS3GATMA1 is -55°C to 175°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of 1.5 K/W or lower, and ensuring good thermal contact between the MOSFET and heat sink.
  • The recommended gate drive voltage for the BSZ900N20NS3GATMA1 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the MOSFET, use a voltage clamp or transient voltage suppressor (TVS) to limit voltage spikes, and consider adding overcurrent protection using a fuse or current sense resistor.
  • The maximum allowed power dissipation for the BSZ900N20NS3GATMA1 is 150W, but this can be increased with proper cooling and heat sinking.

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BSZ900N20NS3GATMA1 Overview

Use the download button to access the BSZ900N20NS3GATMA1 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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