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BU406G - onsemi

Description: High Voltage: VCEV = 330 or 400 V; Packaged in Compact JEDEC TO-220AB; Fast Switching Speed: tf = 750 ns (max); Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A; Pb-Free Package is Available

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PCB Footprints
BU406G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 3-pin TO-220AB
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BU406G - onsemi  - 3D model - Transistor Outline, Vertical - 3-pin TO-220AB
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BU406G Details

  • Manufacturer Part Number:

    BU406G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    ROHS COMPLIANT, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Additional Feature:

    LEADFORM OPTIONS ARE AVAILABLE

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    7 A

  • Collector-Emitter Voltage-Max:

    200 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    60 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    10 MHz

BU406G Frequently Asked Questions (FAQs)

  • The BU406G can operate from -40°C to 150°C, but the recommended operating temperature range is -40°C to 125°C for optimal performance.
  • To ensure proper biasing, connect the base of the transistor to a voltage source through a resistor, and connect the emitter to ground through a resistor. The recommended biasing voltage is around 2.5V to 3.5V.
  • The maximum collector current rating for the BU406G is 10A, but it's recommended to keep the current below 5A for optimal reliability and performance.
  • Yes, the BU406G can be used as a switch in high-frequency applications up to 100 kHz, but it's essential to consider the transistor's switching characteristics, such as rise and fall times, to ensure optimal performance.
  • To protect the BU406G from ESD, handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag or container. Also, ensure the PCB design includes ESD protection components, such as TVS diodes or resistors.

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BU406G Overview

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BU406G Alternates

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Image Part Number Model
Part Image BU406G Rochester Electronics LLC

7A, 200V, NPN, Si, POWER TRANSISTOR, TO-220AB, ROHS COMPLIANT, CASE 221A-09, 3 PIN

Part Image BU406 Samsung Semiconductor

Power Bipolar Transistor, 7A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BU406TU Fairchild Semiconductor Corporation

Power Bipolar Transistor, 7A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BU406TU onsemi

Power Bipolar Transistor, 7A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image BU406 STMicroelectronics

Power Bipolar Transistor, 7A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

For a full list of alternate parts for BU406G, check out Findchips.com