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BUB941ZT - STMicroelectronics

Description: Darlington Transistors NPN Power Darlington

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BUB941ZT - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - BUB941ZT
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BUB941ZT - STMicroelectronics  - 3D model - Transistor Outline, Vertical - BUB941ZT
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BUB941ZT Details

  • Manufacturer Part Number:

    BUB941ZT

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK

  • Package Description:

    TO-263, D2PAK-3

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    15 A

  • Collector-Emitter Voltage-Max:

    350 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    300

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    150 W

  • Power Dissipation-Max (Abs):

    150 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    1.8 V

BUB941ZT Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern around the device.
  • Implement a proper heat sink design, ensure good airflow, and consider using a thermal interface material (TIM) to reduce thermal resistance. Monitor the device's junction temperature (Tj) and adjust the system design accordingly.
  • Use a shielded enclosure, keep the device away from antennas and high-frequency circuits, and ensure proper grounding and decoupling. Implement EMI filters and shielding on the PCB if necessary.
  • Ensure a stable input voltage, use a low-dropout regulator (LDO) if necessary, and optimize the PCB layout for minimal voltage drops. Consider using a voltage supervisor to monitor the input voltage.
  • Use a 4-wire Kelvin connection for accurate voltage and current measurements. Ensure proper probe placement and consider using a high-impedance probe to minimize loading effects.

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BUB941ZT Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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Part Image BUB941ZTT4 STMicroelectronics

Power Bipolar Transistor, 15A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin