BUK762R9-40E - NXP

BUK762R9-40E Details

• Manufacturer Part Number:

  BUK762R9-40E

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Transferred

• Package Description:

  PLASTIC, D2PAK-3/2

• ECCN Code:

  EAR99

• Manufacturer:

  NXP Semiconductors

• Additional Feature:

  AVALANCHE RATED

• Avalanche Energy Rating (Eas):

  419 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  40 V

• Drain Current-Max (ID):

  100 A

• Drain-source On Resistance-Max:

  0.0029 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JESD-30 Code:

  R-PSSO-G2

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  2

• Operating Mode:

  ENHANCEMENT MODE

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Polarity/Channel Type:

  N-CHANNEL

• Pulsed Drain Current-Max (IDM):

  825 A

• Reference Standard:

  AEC-Q101; IEC-60134

• Surface Mount:

  YES

• Terminal Finish:

  PURE TIN

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON