BUK768R3-60E - NXP

BUK768R3-60E Details

• Manufacturer Part Number:

  BUK768R3-60E

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Transferred

• Package Description:

  PLASTIC, D2PAK-3/2

• ECCN Code:

  EAR99

• Manufacturer:

  NXP Semiconductors

• Additional Feature:

  AVALANCHE RATED

• Avalanche Energy Rating (Eas):

  86 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  60 V

• Drain Current-Max (ID):

  75 A

• Drain-source On Resistance-Max:

  0.0083 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JESD-30 Code:

  R-PSSO-G2

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  2

• Operating Mode:

  ENHANCEMENT MODE

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  245

• Polarity/Channel Type:

  N-CHANNEL

• Pulsed Drain Current-Max (IDM):

  349 A

• Reference Standard:

  AEC-Q101; IEC-60134

• Surface Mount:

  YES

• Terminal Finish:

  Tin (Sn)

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Time@Peak Reflow Temperature-Max (s):

  30

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON