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BUK7Y29-40EX - Nexperia

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BUK7Y29-40EX Details

  • Manufacturer Part Number:

    BUK7Y29-40EX

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC

  • Package Description:

    SOP-8, 4 PIN

  • Pin Count:

    4

  • Manufacturer Package Code:

    SOT669

  • Country Of Origin:

    Mainland China, Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Nexperia

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    8.7 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    26 A

  • Drain-source On Resistance-Max:

    0.029 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    84 pF

  • JEDEC-95 Code:

    MO-235

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    37 W

  • Pulsed Drain Current-Max (IDM):

    102 A

  • Reference Standard:

    AEC-Q101; IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BUK7Y29-40EX Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BUK7Y29-40EX is -40°C to 150°C, as specified in the datasheet. However, it's recommended to derate the device's power dissipation at higher temperatures to ensure reliable operation.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet, including the gate-source voltage (VGS) and drain-source voltage (VDS) ratings. Additionally, ensure the device is operated within the specified current limits and thermal constraints.
  • For optimal thermal performance, use a PCB layout that provides good thermal conductivity and heat dissipation. This includes using a thermal pad, thermal vias, and a heat sink if necessary. Follow Nexperia's recommended PCB layout guidelines and thermal management recommendations for the BUK7Y29-40EX.
  • Yes, the BUK7Y29-40EX is suitable for high-frequency switching applications due to its low gate charge and high switching speed. However, ensure that the device is properly biased and operated within the specified frequency range to avoid overheating and ensure reliable operation.
  • To protect the BUK7Y29-40EX from ESD, follow standard ESD handling and storage procedures, such as using ESD-safe packaging, handling the device by the body, and avoiding direct contact with the pins. Additionally, consider using ESD protection devices or circuits in the application.

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BUK7Y29-40EX Overview

Use the download button to access the BUK7Y29-40EX 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like BUK7Y, or try a keyword search, such as Power Field-Effect Transistors

About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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Part Image 934067435115 Nexperia

Power Field-Effect Transistor, 26A I(D), 40V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235