BUK9K25-40E - NXP

BUK9K25-40E Details

• Manufacturer Part Number:

  BUK9K25-40E

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Transferred

• ECCN Code:

  EAR99

• Manufacturer:

  NXP Semiconductors

• Avalanche Energy Rating (Eas):

  15 mJ

• Case Connection:

  DRAIN

• Configuration:

  SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  40 V

• Drain Current-Max (ID):

  18.2 A

• Drain-source On Resistance-Max:

  0.029 Ω

• FET Technology:

  TRENCH MOSFET

• Feedback Cap-Max (Crss):

  76 pF

• JESD-30 Code:

  R-PDSO-X8

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  2

• Number of Terminals:

  8

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  32 W

• Pulsed Drain Current-Max (IDM):

  94 A

• Reference Standard:

  AEC-Q101; IEC-60134

• Surface Mount:

  YES

• Terminal Finish:

  Tin (Sn)

• Terminal Form:

  UNSPECIFIED

• Terminal Position:

  DUAL

• Time@Peak Reflow Temperature-Max (s):

  30

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON