Part Image

BUK9K6R8-40EX - Nexperia

Description: MOSFETs BUK9K6R8-40E/SOT1205/LFPAK56D

Download BUK9K6R8-40EX Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
BUK9K6R8-40EX - Nexperia PCB footprint - Other - Other - SOT1205_2022
click to zoom
3D Models
BUK9K6R8-40EX - Nexperia  - 3D model - Other - SOT1205_2022
click to zoom

BUK9K6R8-40EX Details

  • Manufacturer Part Number:

    BUK9K6R8-40EX

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8, 4 PIN

  • Pin Count:

    8

  • Manufacturer Package Code:

    SOT1205

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    Nexperia

  • YTEOL:

    5.6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.0072 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    202 pF

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    64 W

  • Pulsed Drain Current-Max (IDM):

    265 A

  • Reference Standard:

    AEC-Q101; IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BUK9K6R8-40EX Frequently Asked Questions (FAQs)

  • The SOA is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general guideline, the SOA is typically limited by the device's thermal capabilities, and it's recommended to consult with Nexperia's application notes or contact their support team for more information.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) that is at least 10V higher than the threshold voltage (Vth). For the BUK9K6R8-40EX, Vth is around 2-4V, so a Vgs of 12-15V is recommended. To fully turn off the MOSFET, ensure Vgs is less than Vth. Additionally, consider using a gate driver with a high current capability to quickly charge and discharge the gate capacitance.
  • For optimal thermal performance, use a PCB layout that minimizes thermal resistance. This includes using a large copper area for the drain pad, using thermal vias to dissipate heat, and keeping the MOSFET away from other heat sources. Additionally, consider using a heat sink or thermal interface material to further reduce thermal resistance. Consult Nexperia's application notes or PCB design guides for more information.
  • To protect the MOSFET from overvoltage, use a voltage clamp or a transient voltage suppressor (TVS) diode to limit the voltage across the device. For overcurrent protection, consider using a current sense resistor and a comparator to detect excessive currents. Additionally, ensure the MOSFET is operated within its safe operating area (SOA) to prevent damage from excessive power dissipation.
  • The recommended gate drive and gate resistor values depend on the specific application and switching frequency. As a general guideline, use a gate resistor (Rg) between 10-100 ohms to limit the gate current and prevent oscillations. The gate drive voltage should be sufficient to fully turn on the MOSFET, typically 10-15V for the BUK9K6R8-40EX. Consult Nexperia's application notes or gate drive IC datasheets for more information.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

BUK9K6R8-40EX Overview

Use the download button to access the BUK9K6R8-40EX schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like BUK9K, or try a keyword search, such as Power Field-Effect Transistors

About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

Parts related to BUK9K6R8-40EX

Showing 0 results