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BUK9Y2R8-40HX - Nexperia

Description: NEXPERIA - BUK9Y2R8-40HX - MOSFET Transistor, N Channel, 120 A, 40 V, 0.0024 ohm, 10 V, 1.66 V

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BUK9Y2R8-40HX Details

  • Manufacturer Part Number:

    BUK9Y2R8-40HX

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC

  • Package Description:

    SOT-669, SOP-8, 4 PIN

  • Pin Count:

    4

  • Manufacturer Package Code:

    SOT669

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Nexperia

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    50 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    246 pF

  • JEDEC-95 Code:

    MO-235

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    172 W

  • Pulsed Drain Current-Max (IDM):

    600 A

  • Reference Standard:

    AEC-Q101; IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BUK9Y2R8-40HX Frequently Asked Questions (FAQs)

  • The SOA is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage ratings. Consult Nexperia's application notes for guidance.
  • To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V), and the gate resistance is minimized. Use a gate driver with a low output impedance and consider adding a gate resistor to slow down the switching edge.
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces. Place the device close to the power source and use a solid ground plane. Avoid using vias or narrow traces near the device.
  • Ensure good thermal contact between the device and a heat sink or thermal pad. Use a thermal interface material (TIM) to fill gaps and reduce thermal resistance. Consider using a fan or heat sink with a high thermal conductivity.
  • The device's reliability and lifetime depend on various factors, including operating conditions, temperature, and quality of the device. Consult Nexperia's reliability reports and application notes for guidance on estimating the device's lifetime.

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BUK9Y2R8-40HX Overview

Use the download button to access the BUK9Y2R8-40HX 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like BUK9Y, or try a keyword search, such as Power Field-Effect Transistors

About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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