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BUT11A - onsemi

Description: Obsolete - NPN Silicon Transistor

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BUT11A - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A
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3D Models
BUT11A - onsemi  - 3D model - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A
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BUT11A Details

  • Manufacturer Part Number:

    BUT11A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    450 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    100 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BUT11A Frequently Asked Questions (FAQs)

  • The maximum SOA for the BUT11A is typically defined by the voltage and current ratings. The device can handle up to 100V and 10A, but the actual SOA will depend on the specific application and operating conditions.
  • To ensure linear operation, the BUT11A should be biased in the active region, with a base-emitter voltage (Vbe) between 0.6V and 0.8V, and a collector-emitter voltage (Vce) greater than 1V. The base current should be limited to prevent saturation.
  • The recommended heatsink design for the BUT11A depends on the specific application and power dissipation requirements. A general rule of thumb is to use a heatsink with a thermal resistance of less than 10°C/W to keep the junction temperature below 150°C.
  • Yes, the BUT11A can be used as a switch, but it's essential to ensure the device is properly biased and driven to minimize switching losses. The base current should be sufficient to drive the transistor into saturation, and the collector-emitter voltage should be minimized during switching.
  • To protect the BUT11A from ESD, it's recommended to use anti-static precautions during handling and storage, such as using anti-static bags, wrist straps, and mats. Additionally, consider adding ESD protection devices, such as TVS diodes, in the circuit design.

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BUT11A Overview

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