Part Image

BUZ11-NR4941 - onsemi

Description: Majority Carrier Device; High Input Impedance; Related Literature- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”; RDS(ON)= 0.040Ω; SOA is Power Dissipation Limited; Linear Transfer Characteristics; Nanosecond Switching Speeds; 30A, 50V

Download BUZ11-NR4941 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
BUZ11-NR4941 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A_2
click to zoom
3D Models
BUZ11-NR4941 - onsemi  - 3D model - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A_2
click to zoom

BUZ11-NR4941 Details

  • Manufacturer Part Number:

    BUZ11-NR4941

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3L

  • Package Description:

    TO-220AB, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.15

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    50 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    75 W

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BUZ11-NR4941 Frequently Asked Questions (FAQs)

  • The BUZ11-NR4941 is designed to operate up to 1 MHz, but it can be used at higher frequencies with reduced performance.
  • To ensure proper biasing, follow the recommended biasing circuit in the datasheet, and make sure the input voltage is within the recommended range (typically 12-15V).
  • The maximum power dissipation of the BUZ11-NR4941 is 125W, but this can be affected by factors such as ambient temperature, thermal resistance, and PCB design.
  • Yes, the BUZ11-NR4941 is suitable for switching regulator applications, but ensure the device is properly biased and the switching frequency is within the recommended range.
  • Use a voltage regulator or a zener diode to limit the input voltage, and consider adding overcurrent protection such as a fuse or a current-sensing resistor.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

BUZ11-NR4941 Overview

Use the download button to access the BUZ11-NR4941 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like BUZ11, or try a keyword search, such as Power Field-Effect Transistors

Parts related to BUZ11-NR4941

Showing 0 results

BUZ11-NR4941 Alternates

Showing results

Image Part Number Model
Part Image BUZ11_NR4941 onsemi

N-Channel Power MOSFET 50V, 30A, 40mΩ, TO-220 3L, 6400-RAIL