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BYW51-200G - onsemi

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BYW51-200G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE 221A-09 ISSUE AH
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BYW51-200G - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE 221A-09 ISSUE AH
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BYW51-200G Details

  • Manufacturer Part Number:

    BYW51-200G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Vietnam

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    6 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.37

  • Additional Feature:

    LOW POWER LOSS

  • Application:

    EFFICIENCY

  • Breakdown Voltage-Min:

    200 V

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.89 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    100 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    8 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    200 V

  • Reverse Current-Max:

    10 µA

  • Reverse Recovery Time-Max:

    0.035 µs

  • Reverse Test Voltage:

    200 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

BYW51-200G Frequently Asked Questions (FAQs)

  • A recommended PCB layout for the BYW51-200G includes a thermal pad on the bottom of the device, connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a heat sink or a metal plate for further heat dissipation.
  • To ensure proper biasing, the BYW51-200G requires a gate-source voltage (Vgs) of 10-15V, and a drain-source voltage (Vds) of 200V. The gate resistor (Rg) should be in the range of 1-10kΩ, and the drain resistor (Rd) should be in the range of 10-100Ω. Additionally, a gate-source capacitor (Cgs) of 100-1000pF is recommended to filter out high-frequency noise.
  • Critical parameters to monitor during operation include the drain-source voltage (Vds), drain current (Id), and junction temperature (Tj). The device should be operated within the recommended maximum ratings, and the junction temperature should be kept below 150°C to prevent thermal damage.
  • To protect the BYW51-200G from ESD, handle the device by the body or use an anti-static wrist strap. The device should be stored in an anti-static bag or wrapped in anti-static material. During assembly, use an ESD-safe workstation and ensure all tools and equipment are grounded.
  • The recommended soldering conditions for the BYW51-200G include a peak temperature of 260°C, a soldering time of 10-30 seconds, and a soldering iron temperature of 350-400°C. The device should be soldered using a solder with a melting point of 180-220°C.

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BYW51-200G Overview

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Part Image BYW51-200 Fairchild Semiconductor Corporation

Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-220AB