- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for BZX55B3V9-TAP
- Part Number BZX55B3V9-TAP
- Manufacturer Vishay
- Pin Count 2
- Part Category Diode
- Package Category Diodes, Axial Diameter Horizontal Mounting
- Footprint Name Diodes, Axial Diameter Horizontal Mounting - DO-35 *
- Released Date Feb 6, 2022
- Last Modified Date Mar 7, 2023 4:10 PM UTC
- Pinout / Pin List Click Here (Member Only)
BZX55B3V9-TAP Details
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Manufacturer Part Number:
BZX55B3V9-TAP
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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Package Description:
HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2
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Country Of Origin:
Mainland China
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ECCN Code:
EAR99
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HTS Code:
8541.10.00.50
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Factory Lead Time:
9 Weeks
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Manufacturer:
Vishay Intertechnologies
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YTEOL:
5.93
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Additional Feature:
LOW NOISE
BZX55B3V9-TAP Frequently Asked Questions (FAQs)
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The recommended land pattern for the BZX55B3V9-TAP is a rectangular pad with a size of 1.3 mm x 0.8 mm, with a solder mask clearance of 0.2 mm. This can be found in the Vishay Intertechnologies' SMD Zener Diode Land Pattern document.
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The thermal derating of the BZX55B3V9-TAP can be handled by following the guidelines in the datasheet. The device has a maximum junction temperature of 150°C, and the power dissipation should be derated by 1.67 mW/°C above 25°C. This means that for every 1°C increase in temperature above 25°C, the power dissipation should be reduced by 1.67 mW.
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The recommended soldering profile for the BZX55B3V9-TAP is a peak temperature of 260°C, with a dwell time of 10-30 seconds. The soldering process should be done in a nitrogen atmosphere to prevent oxidation. This can be found in the Vishay Intertechnologies' Soldering Profile document.
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Yes, the BZX55B3V9-TAP is suitable for high-reliability applications. It has a high surge current capability and is designed to meet the requirements of AEC-Q101, which is a standard for automotive-grade components. However, it's recommended to consult with Vishay Intertechnologies' application engineers to ensure that the device meets the specific requirements of your application.
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The power dissipation of the BZX55B3V9-TAP can be calculated using the formula P = (Vz x Iz) + (Vr x Ir), where Vz is the zener voltage, Iz is the zener current, Vr is the reverse voltage, and Ir is the reverse current. The maximum power dissipation is 500 mW, and the device should be operated within this limit to ensure reliable operation.
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BZX55B3V9-TAP Overview
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