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C2M0025120D - Wolfspeed

Description: 1200 V, 25 mΩ, TO-247-3 package, Industrial qualified, Discrete SiC MOSFET

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Symbol
C2M0025120D - Wolfspeed - PCB symbol
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PCB Footprints
C2M0025120D - Wolfspeed PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-3L
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3D Models
C2M0025120D - Wolfspeed - 3D model - Transistor Outline, Vertical - TO-247-3L
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C2M0025120D Details

  • Manufacturer Part Number:

    C2M0025120D

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China, Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    90 A

  • Drain-source On Resistance-Max:

    0.034 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    250 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

C2M0025120D Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • Use a gold wire with a diameter of 0.7-1.0 mil (18-25 μm) and a bonding force of 2-5 grams. The bonding temperature should be between 150°C to 180°C. Ensure the bonding area is clean and free of oxidation.
  • Store the devices in their original packaging or in a static-safe environment. Handle the devices with wrist straps or anti-static gloves. Avoid touching the device pins or exposed die.
  • Yes, but ensure the gate driver is compatible with the device's gate-source voltage and current requirements. The gate driver should also be able to provide a fast switching time and low power loss.
  • Use a low-inductance package and a short, wide PCB trace to minimize parasitic inductance. Ensure the device is properly decoupled with high-frequency capacitors. Optimize the gate drive circuitry for fast switching times.

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C2M0025120D Overview

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