Part Image

C2M0045170D - Wolfspeed

Description: 1700 V, 45 mΩ, TO-247-3 package, Industrial qualified, Discrete SiC MOSFET

Download C2M0045170D Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
C2M0045170D - Wolfspeed PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-3L
click to zoom
3D Models
C2M0045170D - Wolfspeed  - 3D model - Transistor Outline, Vertical - TO-247-3L
click to zoom

C2M0045170D Details

  • Manufacturer Part Number:

    C2M0045170D

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1700 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.07 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    6.7 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    338 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Reference Standard:

    IEC-60747-8-4

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

C2M0045170D Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended junction temperature (Tj) range of -40°C to 150°C. Implement a thermal management system, such as a heat sink or fan, to maintain a safe operating temperature.
  • A gate drive voltage of 15-20V and a current of 1-2A is recommended for optimal switching performance. However, the specific requirements may vary depending on the application and circuit design.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits in the system design. Use a voltage regulator or a TVS diode to protect against overvoltage, and a current sense resistor or a fuse to protect against overcurrent.
  • Use a wire bonding technique with a gold or aluminum wire, and follow the recommended bonding parameters. For soldering, use a solder with a melting point above 220°C, and follow the recommended soldering profile.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

C2M0045170D Overview

Use the download button to access the C2M0045170D schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like C2M00, or try a keyword search, such as Power Field-Effect Transistors

Parts related to C2M0045170D

Showing 0 results