Please enter a minimum 3 letters or numbers
Technical Content
Part Image

C2M0045170P - Wolfspeed

Description: 1700 V, 45 mΩ, TO-247-4 Plus package, Industrial qualified, Discrete SiC MOSFET

Download C2M0045170P Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
C2M0045170P - Wolfspeed - PCB symbol
click to zoom
PCB Footprints
C2M0045170P - Wolfspeed PCB footprint - Other - Other - TO-247-4L PLUS
click to zoom
3D Models
C2M0045170P - Wolfspeed - 3D model - Other - TO-247-4L PLUS
click to zoom

C2M0045170P Details

  • Manufacturer Part Number:

    C2M0045170P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1700 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.07 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    6.7 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    338 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Reference Standard:

    IEC-60747-8-4

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

C2M0045170P Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • Ensure that the device is properly mounted on a heat sink, and the thermal interface material is applied correctly. Also, follow the recommended operating conditions and derating guidelines to prevent overheating.
  • The maximum allowable voltage transient for C2M0045170P is ±10% of the rated voltage. Exceeding this limit may cause damage to the device.
  • Yes, but it's crucial to ensure that the devices are matched in terms of threshold voltage and on-resistance to prevent uneven current sharing. Additionally, a common gate driver and proper layout are essential for reliable operation.
  • The recommended gate drive voltage for C2M0045170P is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

C2M0045170P Overview

Use the download button to access the C2M0045170P schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like C2M00, or try a keyword search, such as Power Field-Effect Transistors

Parts related to C2M0045170P

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑