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C2M0080170P - Wolfspeed

Description: MOSFET DMOSFET 1.7kV 80mOHMS 4PLUS

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PCB Footprints
C2M0080170P - Wolfspeed PCB footprint - Other - Other - TO-247-4L PLUS
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3D Models
C2M0080170P - Wolfspeed  - 3D model - Other - TO-247-4L PLUS
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C2M0080170P Details

  • Manufacturer Part Number:

    C2M0080170P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1700 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.125 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

C2M0080170P Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout. Also, derate the device's power handling capability according to the temperature derating curve provided in the datasheet.
  • The device can withstand voltage transients up to 1.5 times the maximum rated voltage for a duration of 10 ms. However, it's recommended to use a voltage clamp or transient voltage suppressor to protect the device from excessive voltage spikes.
  • Yes, but it's crucial to ensure that the devices are matched in terms of threshold voltage and on-resistance. Also, a current sharing scheme should be implemented to prevent uneven current distribution.
  • Use a shielded enclosure, keep the device away from sensitive circuits, and use a common-mode choke or ferrite bead to filter out high-frequency noise. Also, ensure that the PCB layout is optimized for minimal loop area and radiation.

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C2M0080170P Overview

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