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C2M1000170D - Wolfspeed

Description: 1700 V, 1000 mΩ, TO-247-3 package, Industrial qualified, Discrete SiC MOSFET

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C2M1000170D - Wolfspeed - PCB symbol
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PCB Footprints
C2M1000170D - Wolfspeed PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - C2M0160120D-.
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3D Models
C2M1000170D - Wolfspeed - 3D model - Transistor Outline, Vertical - C2M0160120D-.
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C2M1000170D Details

  • Manufacturer Part Number:

    C2M1000170D

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China, Malaysia, Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    0

  • Additional Feature:

    HIGH RELIABILITY

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1700 V

  • Drain Current-Max (ID):

    4.9 A

  • Drain-source On Resistance-Max:

    1.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    5 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

C2M1000170D Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout. Also, derate the device's power handling capability according to the temperature derating curve in the datasheet.
  • A gate driver with a high current capability (e.g., 2A) and a low output impedance is recommended. The gate drive circuitry should also include a resistor in series with the gate to limit the current and prevent oscillations.
  • Use a voltage clamp or a zener diode to protect the device from overvoltage. For overcurrent protection, use a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • Use a wire bonding technique with a 1-mil aluminum wire or a gold wire. For soldering, use a solder with a high melting point (e.g., 96.5Sn/3Ag/0.5Cu) and follow the recommended soldering profile to prevent thermal damage.

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C2M1000170D Overview

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