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C2M1000170J - Wolfspeed

Description: 1700 V, 1000 mΩ, TO-263-7 package, Industrial qualified, Discrete SiC MOSFET

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Symbol
C2M1000170J - Wolfspeed - PCB symbol
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PCB Footprints
C2M1000170J - Wolfspeed PCB footprint - Other - Other - TO- 263- 7
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3D Models
C2M1000170J - Wolfspeed - 3D model - Other - TO- 263- 7
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C2M1000170J Details

  • Manufacturer Part Number:

    C2M1000170J

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1700 V

  • Drain Current-Max (ID):

    5.3 A

  • Drain-source On Resistance-Max:

    1.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    6 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

C2M1000170J Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • Use a gold wire with a diameter of 0.7-1.0 mil (18-25 μm) and a bonding force of 2-5 grams. The bonding temperature should be between 150°C to 180°C. Ensure the bonding area is clean and free of oxidation.
  • The maximum allowed voltage transient is ±10% of the rated voltage. Exceeding this limit may cause device damage or reduce its lifespan.
  • Handle the device in an ESD-controlled environment. Use an ESD wrist strap or mat, and ensure all equipment is grounded. Avoid touching the device's pins or exposed die.
  • A gate drive voltage of 15-20 V and a resistance of 10-20 ohms is recommended. This ensures proper switching and minimizes power losses.

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C2M1000170J Overview

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C2M1000170J Alternates

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Part Image C2M1000170J-TR Wolfspeed

Power Field-Effect Transistor, 5.3A I(D), 1700V, 1.4ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET