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C3D06065E - Wolfspeed

Description: 650 V, 6 A, TO-252-2 package, Industrial qualified, Discrete SiC Schottky Diode

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Symbol
C3D06065E - Wolfspeed - PCB symbol
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PCB Footprints
C3D06065E - Wolfspeed PCB footprint - Other - Other - TO-252-2-2025-1
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C3D06065E - Wolfspeed - 3D model - Other - TO-252-2-2025-1
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C3D06065E Details

  • Manufacturer Part Number:

    C3D06065E

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    6.62

  • Additional Feature:

    FREE WHEELING DIODE, PD-CASE

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.7 V

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Non-rep Pk Forward Current-Max:

    49 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    20 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    100 W

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    40 µA

  • Reverse Test Voltage:

    650 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

C3D06065E Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout. Also, derate the device's power handling capability according to the temperature derating curve in the datasheet.
  • The device can withstand voltage transients up to 1.5 times the maximum rated voltage for a duration of 100 ms. However, it's recommended to use a voltage clamp or transient voltage suppressor to protect the device from excessive voltage spikes.
  • Follow proper handling and storage procedures to prevent EOS damage. Use an electrostatic discharge (ESD) wrist strap or mat when handling the device, and ensure that the PCB is properly grounded during assembly.
  • A gate drive circuit with a high current capability (e.g., 1 A) and a fast rise time (e.g., 10 ns) is recommended. The gate drive voltage should be set to the recommended value in the datasheet to ensure optimal switching performance.

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C3D06065E Overview

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