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C3D10065E - Wolfspeed

Description: 650 V, 10 A, TO-252-2 package, Industrial qualified, Discrete SiC Schottky Diode

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C3D10065E - Wolfspeed PCB footprint - Other - Other - TO-252-2-2025-14
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C3D10065E - Wolfspeed  - 3D model - Other - TO-252-2-2025-14
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C3D10065E Details

  • Manufacturer Part Number:

    C3D10065E

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    0

  • Additional Feature:

    PD-CASE

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.8 V

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Non-rep Pk Forward Current-Max:

    71 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    32 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    150 W

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    50 µA

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

C3D10065E Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout. Also, derate the device's power handling capability according to the temperature derating curve in the datasheet.
  • The device can withstand voltage transients up to 1.5 times the maximum rated voltage for a duration of 100 ms. However, it's recommended to use a voltage clamp or transient voltage suppressor to protect the device from excessive voltage spikes.
  • Yes, the C3D10065E can be used in a half-bridge configuration. However, ensure that the device is properly biased and that the gate drive circuitry is designed to handle the high dv/dt and di/dt stresses associated with half-bridge operation.
  • A gate drive voltage of 15-20 V and a current of 1-2 A is recommended. The gate drive circuitry should be designed to provide a fast rise and fall time (<10 ns) to minimize switching losses.

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C3D10065E Overview

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