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C3M0016120D - Wolfspeed

Description: 1200 V, 16 mΩ, TO-247-3 package, Industrial qualified, Discrete SiC MOSFET

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C3M0016120D - Wolfspeed - PCB symbol
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PCB Footprints
C3M0016120D - Wolfspeed PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - Package TO-247-3
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3D Models
C3M0016120D - Wolfspeed - 3D model - Transistor Outline, Vertical - Package TO-247-3
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C3M0016120D Details

  • Manufacturer Part Number:

    C3M0016120D

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    115 A

  • Drain-source On Resistance-Max:

    0.0223 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    13 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    556 W

  • Pulsed Drain Current-Max (IDM):

    250 A

  • Reference Standard:

    IEC-60747-8-4

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

C3M0016120D Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermally conductive material for the heat sink, and maintain a maximum junction temperature (Tj) of 150°C. Also, follow the recommended derating curves for current and voltage at high temperatures.
  • A gate drive voltage of 15-20V and a current of 1-2A is recommended for optimal switching performance. However, the exact values may vary depending on the specific application and circuit design.
  • Use a TVS diode or a zener diode to clamp the voltage and prevent overvoltage conditions. Also, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • A dead time of 100-200ns is recommended to minimize shoot-through current. However, the exact value may vary depending on the specific application and circuit design.

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C3M0016120D Overview

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C3M0016120D Alternates

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Part Image NVHL020N120SC1 onsemi

Power Field-Effect Transistor, 103A I(D), 1200V, 0.028ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247