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C3M0021120K - Wolfspeed

Description: 1200 V, 21 mΩ, TO-247-4 package, Industrial qualified, Discrete SiC MOSFET

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C3M0021120K - Wolfspeed PCB footprint - Other - Other - TO-247-4L
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C3M0021120K - Wolfspeed  - 3D model - Other - TO-247-4L
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C3M0021120K Details

  • Manufacturer Part Number:

    C3M0021120K

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0288 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Reference Standard:

    IEC-60747-8-4

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

C3M0021120K Frequently Asked Questions (FAQs)

  • The maximum operating temperature for the C3M0021120K is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a temperature below 125°C for optimal performance and reliability.
  • To ensure proper biasing, follow the recommended biasing scheme outlined in the datasheet. Typically, this involves applying a gate-source voltage (Vgs) between 2-4V and a drain-source voltage (Vds) between 10-20V, depending on the specific application requirements.
  • For optimal thermal performance, it's recommended to use a PCB with a thermal pad and a heat sink. The datasheet provides guidelines for PCB layout and thermal management. Additionally, ensure good thermal conductivity between the device and the heat sink using a thermal interface material.
  • To protect the C3M0021120K from ESD, follow proper handling and storage procedures. Use an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded. Avoid touching the device's pins or handling the device in a way that could generate static electricity.
  • The recommended gate driver for the C3M0021120K depends on the specific application requirements. However, a high-current, low-impedance gate driver with a rise time of <10ns is typically recommended. Consult the datasheet and application notes for more information.

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C3M0021120K Overview

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Part Image C3M0021120K Cree, Inc.

Power Field-Effect Transistor, 100A I(D), 1200V, 0.0288ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247