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C3M0025065D - Wolfspeed

Description: 650 V, 25 mΩ, TO-247-3 package, Industrial qualified, Discrete SiC MOSFET

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Symbol
C3M0025065D - Wolfspeed - PCB symbol
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PCB Footprints
C3M0025065D - Wolfspeed PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-3L
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3D Models
C3M0025065D - Wolfspeed - 3D model - Transistor Outline, Vertical - TO-247-3L
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C3M0025065D Details

  • Manufacturer Part Number:

    C3M0025065D

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    97 A

  • Drain-source On Resistance-Max:

    0.034 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    12 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    326 W

  • Pulsed Drain Current-Max (IDM):

    251 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

C3M0025065D Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • Use a wire bond process with a gold or aluminum wire, and ensure the bond pad is clean and free of oxidation. Apply a bond force of 20-40 grams and a bond temperature of 150-200°C.
  • The maximum allowed voltage transient is 10% above the maximum rated voltage (Vds) for a duration of less than 10 microseconds. Exceeding this may cause device damage.
  • Handle the device in an ESD-controlled environment, and use ESD-protective packaging and handling materials. Ground yourself before handling the device, and avoid touching the device's pins or die.
  • Store the device in its original packaging, away from direct sunlight and moisture. Avoid bending or flexing the leads, and handle the device by the package body, not the leads.

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C3M0025065D Overview

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