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C3M0025065J1 - Wolfspeed

Description: 650 V, 25 mΩ, TO-263-7 XL package, Industrial qualified, Discrete SiC MOSFET

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C3M0025065J1 - Wolfspeed - PCB symbol
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PCB Footprints
C3M0025065J1 - Wolfspeed PCB footprint - Other - Other - TO-263-7L XL_J1
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3D Models
C3M0025065J1 - Wolfspeed - 3D model - Other - TO-263-7L XL_J1
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C3M0025065J1 Details

  • Manufacturer Part Number:

    C3M0025065J1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    7

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.034 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    12 pF

  • JEDEC-95 Code:

    TO-263

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    271 W

  • Pulsed Drain Current-Max (IDM):

    251 A

  • Reference Standard:

    IEC-60747-8-4

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

C3M0025065J1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature for the C3M0025065J1 is 150°C, but it's recommended to operate it at a maximum of 125°C for optimal performance and reliability.
  • To ensure proper biasing, follow the recommended biasing scheme outlined in the datasheet, and make sure to provide a stable voltage supply to the gate and drain terminals. Additionally, consider using a gate driver IC to ensure fast switching times and minimal ringing.
  • For optimal thermal performance, use a PCB with a thick copper layer (at least 2 oz) and a thermal via array under the device. Ensure good thermal conductivity by using a thermal interface material (TIM) between the device and the heat sink. A heat sink with a thermal resistance of 1°C/W or lower is recommended.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the device from overvoltage conditions. For overcurrent protection, consider using a current sense resistor and a comparator to detect excessive current levels. Additionally, ensure that the device is operated within its recommended operating conditions to prevent damage.
  • The recommended gate drive voltage for the C3M0025065J1 is between 0V and 5V, with a maximum gate-source voltage of 6V. Ensure that the gate drive voltage is within this range to prevent damage to the device.

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C3M0025065J1 Overview

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