Please enter a minimum 3 letters or numbers
Technical Content
Part Image

C3M0040120J1 - Wolfspeed

Description: 1200 V, 40 mΩ, TO-263-7 XL package, Industrial qualified, Discrete SiC MOSFET

Download C3M0040120J1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
C3M0040120J1 - Wolfspeed - PCB symbol
click to zoom
PCB Footprints
C3M0040120J1 - Wolfspeed PCB footprint - Other - Other - TO-263-7L XL_J1
click to zoom
3D Models
C3M0040120J1 - Wolfspeed - 3D model - Other - TO-263-7L XL_J1
click to zoom

C3M0040120J1 Details

  • Manufacturer Part Number:

    C3M0040120J1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    6.8

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    64 A

  • Drain-source On Resistance-Max:

    0.0535 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-263

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    272 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

C3M0040120J1 Frequently Asked Questions (FAQs)

  • The recommended gate drive voltage for the C3M0040120J1 is between 15V and 20V. This ensures optimal switching performance and minimizes losses.
  • To handle the high di/dt and dv/dt ratings of the C3M0040120J1, ensure that your PCB design has a low inductance layout, use a suitable gate driver with a high current capability, and consider adding a snubber circuit to reduce ringing and overshoot.
  • The maximum junction temperature (Tj) for the C3M0040120J1 is 175°C. Operating the device above this temperature can reduce its lifespan and affect its performance.
  • Yes, you can use multiple C3M0040120J1 devices in parallel to increase current handling. However, ensure that each device has its own gate driver and that the gate signals are properly synchronized to prevent shoot-through currents.
  • The recommended cooling method for the C3M0040120J1 is to use a heat sink with a thermal interface material (TIM) and a fan for forced air cooling. Ensure that the heat sink is properly sized and attached to the device to maintain a low thermal resistance.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

C3M0040120J1 Overview

Use the download button to access the C3M0040120J1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like C3M00, or try a keyword search, such as Power Field-Effect Transistors

Parts related to C3M0040120J1

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑