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C3M0045065J1 - Wolfspeed

Description: 650 V, 45 mΩ, TO-263-7 XL package, Industrial qualified, Discrete SiC MOSFET

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PCB Footprints
C3M0045065J1 - Wolfspeed PCB footprint - Other - Other - TO-263-7L XL_J1
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C3M0045065J1 - Wolfspeed  - 3D model - Other - TO-263-7L XL_J1
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C3M0045065J1 Details

  • Manufacturer Part Number:

    C3M0045065J1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    7

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    47 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    8 pF

  • JEDEC-95 Code:

    TO-263

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    147 W

  • Pulsed Drain Current-Max (IDM):

    132 A

  • Reference Standard:

    IEC-60747-8-4

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

C3M0045065J1 Frequently Asked Questions (FAQs)

  • Wolfspeed provides a PCB layout guide and thermal design recommendations in their application notes and design resources. It's essential to follow these guidelines to ensure proper heat dissipation, minimize parasitic inductance, and optimize switching performance.
  • When selecting a gate driver, consider the MOSFET's gate charge, threshold voltage, and switching frequency. Wolfspeed recommends using a gate driver with a high current capability (>1A) and a voltage rating that matches the MOSFET's gate-source voltage. Additionally, ensure the gate driver is compatible with the MOSFET's input capacitance and can provide a fast rise and fall time.
  • The high dv/dt rating of the C3M0045065J1 requires careful system design to prevent voltage overshoots, ringing, and electromagnetic interference (EMI). Ensure proper layout, use of snubbers or RC filters, and consider the impact on other system components, such as the gate driver, DC-DC converter, and load.
  • To ensure reliable operation, follow Wolfspeed's recommended operating conditions, including voltage, current, and temperature ratings. Implement proper thermal management, use a suitable gate driver, and ensure the MOSFET is operated within its safe operating area (SOA). Additionally, consider implementing fault detection and protection mechanisms, such as overcurrent and overtemperature protection.
  • SiC MOSFETs like the C3M0045065J1 offer faster switching speeds, lower losses, and higher efficiency compared to Si IGBTs. However, SiC MOSFETs typically have a higher cost, lower current ratings, and may require more complex gate drive circuits. Evaluate your specific application requirements and weigh the benefits of each technology to make an informed decision.

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C3M0045065J1 Overview

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