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C3M0060065D - Wolfspeed

Description: 650 V, 60 mΩ, TO-247-3 package, Industrial qualified, Discrete SiC MOSFET

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C3M0060065D - Wolfspeed - PCB symbol
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PCB Footprints
C3M0060065D - Wolfspeed PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-3...
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3D Models
C3M0060065D - Wolfspeed - 3D model - Transistor Outline, Vertical - TO-247-3...
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C3M0060065D Details

  • Manufacturer Part Number:

    C3M0060065D

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    29 A

  • Drain-source On Resistance-Max:

    0.079 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    9 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    99 A

  • Reference Standard:

    IEC-60747-8-4

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

C3M0060065D Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • Use a wire bond process with a gold or aluminum wire, and ensure the bond pad is clean and free of oxidation. Apply a bond force of 20-40 grams and a bond temperature of 150-180°C.
  • The maximum allowable voltage stress is 650V, but it's recommended to operate the device at a maximum voltage of 600V to ensure reliability and minimize the risk of avalanche breakdown.
  • Handle the device in an ESD-controlled environment, and use ESD-protective packaging and handling materials. Ground yourself before handling the device, and avoid touching the device's pins or die.
  • Store the device in its original packaging in a dry, cool place. Avoid exposing the device to direct sunlight, moisture, or extreme temperatures. Handle the device by the package, not the pins, to prevent damage.

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C3M0060065D Overview

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Power Field-Effect Transistor, 39A I(D), 650V, 0.078ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247