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C3M0065100J - Wolfspeed

Description: 1000 V, 65 mΩ, TO-263-7 package, Industrial qualified, Discrete SiC MOSFET

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PCB Footprints
C3M0065100J - Wolfspeed PCB footprint - Other - Other - TO- 263- 7
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C3M0065100J - Wolfspeed  - 3D model - Other - TO- 263- 7
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C3M0065100J Details

  • Manufacturer Part Number:

    C3M0065100J

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    110 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1000 V

  • Drain Current-Max (ID):

    32 A

  • Drain-source On Resistance-Max:

    0.078 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-263

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    113.5 W

  • Pulsed Drain Current-Max (IDM):

    90 A

  • Reference Standard:

    IEC-60747-8-4

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

C3M0065100J Frequently Asked Questions (FAQs)

  • The maximum operating temperature for the C3M0065100J is 150°C, but it's recommended to operate it at a maximum of 125°C for optimal performance and reliability.
  • Proper cooling is crucial for the C3M0065100J. Ensure good thermal contact between the device and a heat sink, and use a thermal interface material if necessary. Also, ensure good airflow around the device.
  • The recommended gate drive voltage for the C3M0065100J is between 15V and 20V, with a maximum of 20V. However, it's essential to consult the datasheet and application notes for specific gate drive requirements.
  • Yes, the C3M0065100J is suitable for high-frequency applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, gate drive requirements, and thermal management when designing high-frequency circuits.
  • To protect the C3M0065100J from overvoltage and overcurrent, use a suitable voltage regulator and current limiter in your design. Also, consider adding overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the device.

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C3M0065100J Overview

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