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C3M0075120D-A - Wolfspeed

Description: 1200 V, 75 mΩ, TO-247-3 package, Industrial qualified, Discrete SiC MOSFET

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PCB Footprints
C3M0075120D-A - Wolfspeed PCB footprint - Other - Other - TO-247-3_2025-4
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3D Models
C3M0075120D-A - Wolfspeed  - 3D model - Other - TO-247-3_2025-4
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C3M0075120D-A Details

  • Manufacturer Part Number:

    C3M0075120D-A

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    6

C3M0075120D-A Frequently Asked Questions (FAQs)

  • Wolfspeed provides a recommended PCB layout and thermal management guide in their application note AN-1101, which includes guidelines for thermal vias, copper thickness, and heat sink attachment.
  • To ensure reliable operation at high temperatures, it's essential to follow Wolfspeed's recommended operating conditions, including junction temperature (Tj) and case temperature (Tc). Additionally, consider using a thermistor or thermocouple to monitor the device temperature and implement thermal derating as needed.
  • The C3M0075120D-A is a sensitive device and requires proper ESD protection during handling and assembly. Wolfspeed recommends following standard ESD handling procedures, such as using an ESD wrist strap, mat, or workstation, and storing the devices in anti-static packaging.
  • While the C3M0075120D-A is a high-performance device, it may not meet the specific requirements for high-reliability or aerospace applications. Wolfspeed offers other devices that are specifically designed and qualified for these applications, such as their HiRel or Space-grade products.
  • Wolfspeed provides a recommended gate drive circuitry in their application note AN-1102, which includes guidelines for gate resistance, gate voltage, and gate current. Additionally, consider using a gate drive IC specifically designed for SiC MOSFETs, such as the Wolfspeed GD3100.

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C3M0075120D-A Overview

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Part Image C3M0075120D Cree, Inc.

Power Field-Effect Transistor, 32A I(D), 1200V, 0.09ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247