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C3M0075120D - Wolfspeed

Description: 1200 V, 75 mΩ, TO-247-3 package, Industrial qualified, Discrete SiC MOSFET

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Symbol
C3M0075120D - Wolfspeed - PCB symbol
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PCB Footprints
C3M0075120D - Wolfspeed PCB footprint - Other - Other - TO-247-3_2025-6
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3D Models
C3M0075120D - Wolfspeed - 3D model - Other - TO-247-3_2025-6
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C3M0075120D Details

  • Manufacturer Part Number:

    C3M0075120D

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    32 A

  • Drain-source On Resistance-Max:

    0.09 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    136 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

C3M0075120D Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the C3M0075120D is 175°C. Exceeding this temperature can lead to reduced performance and lifespan.
  • Proper cooling is crucial for the C3M0075120D. Ensure good thermal contact between the device and a heat sink, and use a thermal interface material if necessary. A heat sink with a thermal resistance of 1°C/W or lower is recommended.
  • The recommended gate drive voltage for the C3M0075120D is between 15V and 20V. This ensures proper switching and minimizes the risk of damage to the device.
  • Yes, the C3M0075120D is suitable for high-frequency applications up to 1 MHz. However, ensure that the device is properly cooled and the gate drive circuit is optimized for high-frequency operation.
  • Use a suitable overvoltage protection circuit and a current sense resistor to monitor the device's current. A fuse or a circuit breaker can also be used to protect the device from overcurrent conditions.

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C3M0075120D Overview

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