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C3M0120065D - Wolfspeed

Description: 650 V, 120 mΩ, TO-247-3 package, Industrial qualified, Discrete SiC MOSFET

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C3M0120065D - Wolfspeed PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-3L
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3D Models
C3M0120065D - Wolfspeed  - 3D model - Transistor Outline, Vertical - TO-247-3L
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C3M0120065D Details

  • Manufacturer Part Number:

    C3M0120065D

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    22 A

  • Drain-source On Resistance-Max:

    0.157 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.3 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    98 W

  • Pulsed Drain Current-Max (IDM):

    51 A

  • Reference Standard:

    IEC-60747-8-4

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

C3M0120065D Frequently Asked Questions (FAQs)

  • A symmetrical layout with thermal vias and a large copper area for heat dissipation is recommended. The datasheet provides a recommended land pattern, but a more detailed layout guide can be found in Wolfspeed's application notes.
  • In addition to following the recommended operating temperature range, ensure proper heat sinking, and consider using a thermal interface material (TIM) to reduce thermal resistance. Also, derate the device's power handling according to the temperature derating curve in the datasheet.
  • While not explicitly stated in the datasheet, Wolfspeed recommends a maximum voltage slew rate of 10 kV/μs to prevent voltage-induced failures. This can be achieved using a snubber circuit or a gate driver with a controlled slew rate.
  • Yes, the C3M0120065D is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the gate driver and PCB layout are optimized for high-frequency operation, and consider the effects of parasitic inductance and capacitance on the device's performance.
  • Follow proper ESD handling procedures, such as using an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protective package. Additionally, consider adding ESD protection circuits, such as a TVS diode, to the PCB design.

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C3M0120065D Overview

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