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C3M0120065J - Wolfspeed

Description: 650 V, 120 mΩ, TO-263-7 package, Industrial qualified, Discrete SiC MOSFET

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C3M0120065J - Wolfspeed PCB footprint - Other - Other - TO-263-7_2023
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C3M0120065J - Wolfspeed  - 3D model - Other - TO-263-7_2023
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C3M0120065J Details

  • Manufacturer Part Number:

    C3M0120065J

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    D2PAK-7

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.157 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.3 pF

  • JEDEC-95 Code:

    TO-263

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    86 W

  • Pulsed Drain Current-Max (IDM):

    51 A

  • Reference Standard:

    IEC-60747-8-4

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

C3M0120065J Frequently Asked Questions (FAQs)

  • A symmetrical layout with thermal vias and a large copper area for heat dissipation is recommended. The datasheet provides a recommended land pattern, but a more detailed layout guide can be found in Wolfspeed's application notes.
  • In addition to following the recommended operating temperature range, ensure proper heat sinking, and consider using a thermal interface material (TIM) to reduce thermal resistance. Also, derate the device's power handling capability according to the temperature derating curve provided in the datasheet.
  • Wolfspeed recommends following standard ESD protection procedures, such as using wrist straps, anti-static bags, and ESD-safe workstations. The device is sensitive to ESD, so proper handling and assembly techniques are crucial to prevent damage.
  • Yes, the C3M0120065J is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the device is properly snubbed to prevent ringing and oscillations, and follow Wolfspeed's guidelines for high-frequency operation.
  • Choose a gate driver that can provide a sufficient voltage swing (e.g., 10-15 V) and current capability (e.g., 1-2 A) to ensure fast switching times and low losses. Consider factors like rise and fall times, propagation delay, and output impedance when selecting a gate driver.

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C3M0120065J Overview

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