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C3M0120065K - Wolfspeed

Description: 650 V, 120 mΩ, TO-247-4 package, Industrial qualified, Discrete SiC MOSFET

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PCB Footprints
C3M0120065K - Wolfspeed PCB footprint - Other - Other - TO-247-4L
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C3M0120065K - Wolfspeed  - 3D model - Other - TO-247-4L
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C3M0120065K Details

  • Manufacturer Part Number:

    C3M0120065K

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    22 A

  • Drain-source On Resistance-Max:

    0.157 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.3 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    98 W

  • Pulsed Drain Current-Max (IDM):

    51 A

  • Reference Standard:

    IEC-60747-8-4

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

C3M0120065K Frequently Asked Questions (FAQs)

  • Wolfspeed recommends a 2-layer PCB with a thermal via array under the device to dissipate heat. A thermal pad on the bottom of the device should be connected to a large copper area on the PCB to improve heat sinking. Additionally, a low-ESR capacitor should be placed close to the device to filter out high-frequency noise.
  • To prevent overheating, ensure that the device is operated within the recommended junction temperature (Tj) range. Implement a thermal management system, such as a heat sink or fan, to keep the device temperature below 150°C. Monitor the device's temperature using a thermocouple or thermal sensor, and implement over-temperature protection (OTP) to shut down the device if it exceeds the maximum temperature rating.
  • Wolfspeed recommends a gate drive voltage of 15-20V and a biasing configuration that ensures the device is operated in the saturation region. A gate resistor (Rg) of 10-20 ohms and a gate-source voltage (Vgs) of 5-10V are typical values. The biasing configuration should be designed to minimize switching losses and ensure reliable operation.
  • To minimize EMI and ensure EMC, use a shielded enclosure, and implement a Faraday cage or metal casing around the device. Use a common-mode choke or ferrite bead to filter out high-frequency noise, and ensure that the PCB layout is designed to minimize radiation and coupling. Additionally, follow good EMC design practices, such as using a ground plane, and minimizing loop areas and wire lengths.
  • Wolfspeed performs a range of reliability and qualification tests, including high-temperature operating life (HTOL), high-temperature storage life (HTSL), temperature cycling, and humidity testing. The device is also subjected to electrical overstress (EOS) and electrostatic discharge (ESD) testing to ensure its robustness and reliability in harsh environments.

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C3M0120065K Overview

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