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C3M0120090J - Wolfspeed

Description: 900 V, 120 mΩ, TO-263-7 package, Industrial qualified, Discrete SiC MOSFET

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Symbol
C3M0120090J - Wolfspeed - PCB symbol
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PCB Footprints
C3M0120090J - Wolfspeed PCB footprint - Other - Other - TO- 263- 7
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3D Models
C3M0120090J - Wolfspeed - 3D model - Other - TO- 263- 7
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C3M0120090J Details

  • Manufacturer Part Number:

    C3M0120090J

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Reach Compliance Code:

    Not Compliant

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    22 A

  • Drain-source On Resistance-Max:

    0.155 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3 pF

  • JEDEC-95 Code:

    TO-263

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    83 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Reference Standard:

    IEC-60747-8-4

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

C3M0120090J Frequently Asked Questions (FAQs)

  • The maximum operating temperature for the C3M0120090J is 150°C, but it's recommended to operate it at a maximum of 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's recommended to use a heat sink with a thermal resistance of 1°C/W or lower, and to apply a thin layer of thermal interface material (TIM) between the device and the heat sink.
  • The recommended gate drive voltage for the C3M0120090J is between 15V and 20V, with a maximum voltage of 25V. However, it's recommended to consult the datasheet and application notes for specific gate drive requirements.
  • Yes, the C3M0120090J is suitable for high-frequency applications up to 100 kHz. However, it's recommended to consult the datasheet and application notes for specific guidance on high-frequency operation.
  • To protect the C3M0120090J from overvoltage and overcurrent, it's recommended to use a voltage clamp or a surge protector, and to implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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C3M0120090J Overview

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