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C3M0350120J - Wolfspeed

Description: 1200 V, 350 mΩ, TO-263-7 package, Industrial qualified, Discrete SiC MOSFET

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Symbol
C3M0350120J - Wolfspeed - PCB symbol
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PCB Footprints
C3M0350120J - Wolfspeed PCB footprint - Other - Other - TO- 263- 7
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3D Models
C3M0350120J - Wolfspeed - 3D model - Other - TO- 263- 7
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C3M0350120J Details

  • Manufacturer Part Number:

    C3M0350120J

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    6.7

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    7.2 A

  • Drain-source On Resistance-Max:

    0.455 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3.4 pF

  • JEDEC-95 Code:

    TO-263

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    40.8 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Reference Standard:

    IEC-60747-8-4

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

C3M0350120J Frequently Asked Questions (FAQs)

  • The maximum operating temperature for the C3M0350120J is 175°C, as specified in the datasheet. However, it's recommended to derate the device's power handling at higher temperatures to ensure reliability and longevity.
  • To ensure proper biasing, follow the recommended biasing circuit and voltage levels outlined in the datasheet. Additionally, consider using a gate driver IC to provide a stable and controlled voltage supply to the gate terminal.
  • For optimal thermal performance, use a PCB layout that provides a low thermal resistance path from the device to a heat sink or thermal pad. Ensure good thermal conductivity by using a thick copper layer and thermal vias. A heat sink or thermal pad with a thermal conductivity of at least 1 W/m-K is recommended.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage from voltage and current surges. Use a voltage regulator or a TVS diode for OVP, and a current sense resistor or a current limiter for OCP.
  • Follow the recommended soldering profile and assembly guidelines outlined in the datasheet. Use a soldering iron with a temperature range of 250°C to 260°C, and ensure the device is handled by trained personnel to prevent mechanical stress and damage.

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C3M0350120J Overview

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