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C4D02120E-TR - Wolfspeed

Description: Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 2A

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C4D02120E-TR - Wolfspeed PCB footprint - Other - Other - C4D02120E-TR-3
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C4D02120E-TR Details

  • Manufacturer Part Number:

    C4D02120E-TR

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    6.75

  • Additional Feature:

    FREE WHEELING DIODE, PD-CASE

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.8 V

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Non-rep Pk Forward Current-Max:

    16.5 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    10 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    60 W

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    50 µA

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

C4D02120E-TR Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout. Also, derate the device's power handling capability according to the temperature derating curve in the datasheet.
  • The device can withstand voltage transients up to 1.5 times the maximum rated voltage for a duration of 100 ms. However, it's recommended to use a TVS diode or a voltage clamp to protect the device from voltage spikes.
  • Yes, but ensure that each device has its own gate resistor and that the gate signals are properly synchronized. Also, consider the current sharing and thermal management implications of parallel operation.
  • A gate drive voltage of 15-20 V and a current of 1-2 A is recommended. However, the optimal gate drive voltage and current may vary depending on the specific application and switching frequency.

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C4D02120E-TR Overview

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Part Image C4D02120E-TR Cree, Inc.

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 1200V V(RRM), Silicon Carbide, TO-252,