SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
DS Breakdown Voltage-Min:
1200 V
Drain Current-Max (ID):
450 A
Drain-source On Resistance-Max:
0.0042 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
60 pF
JESD-30 Code:
R-PUFM-X11
Number of Elements:
2
Number of Terminals:
11
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-40 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Pulsed Drain Current-Max (IDM):
800 A
Reference Standard:
IEC-60747-8-4
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON CARBIDE
CAB425M12XM3 Frequently Asked Questions (FAQs)
The maximum operating temperature range for the CAB425M12XM3 is -40°C to 150°C.
Proper thermal management can be achieved by using a heat sink with a thermal interface material, ensuring good airflow, and keeping the device away from heat sources.
The recommended gate drive voltage for the CAB425M12XM3 is +15V to -5V, with a maximum gate-source voltage of ±20V.
Yes, the CAB425M12XM3 can be used in a parallel configuration, but it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized.
Protection from overvoltage and overcurrent can be achieved by using a voltage clamp, a current sense resistor, and a fuse or circuit breaker.
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CAB425M12XM3 Overview
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