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CCS050M12CM2 - Wolfspeed

Description: Dual N-chan SiC MOSFET Module 1200V 59A

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CCS050M12CM2 - Wolfspeed - PCB symbol
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CCS050M12CM2 - Wolfspeed PCB footprint - Other - Other - CCS050M12CM2-3
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CCS050M12CM2 - Wolfspeed - 3D model - Other - CCS050M12CM2-3
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CCS050M12CM2 Details

  • Manufacturer Part Number:

    CCS050M12CM2

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    MODULE-28

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Configuration:

    3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    87 A

  • Drain-source On Resistance-Max:

    0.036 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XUFM-X28

  • Number of Elements:

    6

  • Number of Terminals:

    28

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    250 A

  • Reference Standard:

    IEC-60747-8-4

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

CCS050M12CM2 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended PCB layout. Also, derate the device's power handling capability according to the temperature derating curve provided in the datasheet.
  • A gate drive circuit with a high current capability (e.g., 1-2 A) and a fast rise/fall time (e.g., <10 ns) is recommended. A gate resistor value between 10-20 ohms is suitable for most applications.
  • Use a TVS diode or a zener diode for overvoltage protection. For overcurrent protection, use a fuse or a current sense resistor with a monitoring circuit. Ensure the protection circuitry is designed to respond quickly to fault conditions.
  • Use a wire bonding technique with a gold or aluminum wire (25-30 um diameter) and a bonding force of 1-2 grams. For soldering, use a solder with a melting point above 260°C and follow the recommended reflow profile.

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CCS050M12CM2 Overview

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