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CGH40035F - Wolfspeed

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CGH40035F - Wolfspeed  - 3D model
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CGH40035F Details

  • Manufacturer Part Number:

    CGH40035F

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    3

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    120 V

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Highest Frequency Band:

    S BAND

  • JESD-30 Code:

    R-CDFM-F2

  • JESD-609 Code:

    e4

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Gold (Au) - with Nickel (Ni) barrier

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    GALLIUM NITRIDE

CGH40035F Frequently Asked Questions (FAQs)

  • A good thermal design is crucial for high-power devices like the CGH40035F. A recommended PCB layout includes a large copper heat sink, thermal vias, and a solid ground plane. Additionally, a heat sink or a thermal interface material (TIM) can be used to improve heat dissipation.
  • To prevent oscillations, ensure that the device is biased correctly, and the input and output impedances are matched. A stability analysis using tools like S-parameters can help identify potential issues. Additionally, adding resistors or capacitors to the circuit can help dampen oscillations.
  • The recommended drive and biasing conditions for the CGH40035F include a gate voltage (Vgs) between -3V to 2V, a drain voltage (Vds) up to 50V, and a quiescent current (Idq) of 100mA. The device should be biased in Class AB operation for optimal linearity and efficiency.
  • To protect the CGH40035F from ESD, handle the device with an ESD wrist strap or mat, and ensure that the PCB has ESD protection circuits. For overvoltage protection, use voltage regulators or zener diodes to limit the voltage to the recommended maximum rating.
  • The CGH40035F has a maximum junction temperature (Tj) of 200°C. For high-temperature operation, derate the power dissipation by 1.5% per degree Celsius above 25°C. Ensure that the device is properly heat-sinked and that the thermal interface material is suitable for high-temperature operation.

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CGH40035F Overview

Use the download button to access the CGH40035F 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like CGH40, or try a keyword search, such as RF Power Field-Effect Transistors

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