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CGHV40100F - Wolfspeed

Description: RF JFET Transistors GaN HEMT DC-4.0GHz, 100 Watt

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CGHV40100F - Wolfspeed  - 3D model
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CGHV40100F Details

  • Manufacturer Part Number:

    CGHV40100F

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.75

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    6.85

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    8.7 A

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Highest Frequency Band:

    S BAND

  • JESD-30 Code:

    R-CDFM-F2

  • JESD-609 Code:

    e4

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    DEPLETION MODE

  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Gold (Au) - with Nickel (Ni) barrier

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    GALLIUM NITRIDE

CGHV40100F Frequently Asked Questions (FAQs)

  • A good thermal design is crucial for high-power devices like the CGHV40100F. A recommended PCB layout includes a large copper heat sink, thermal vias, and a solid ground plane. Additionally, a heat sink or a thermal interface material (TIM) can be used to improve heat dissipation.
  • To prevent oscillations, ensure that the device is properly biased, and the input and output impedances are matched. A stability analysis using tools like S-parameters can help identify potential issues. Additionally, adding resistors or capacitors to the circuit can help dampen oscillations.
  • The recommended drive and bias conditions for the CGHV40100F include a gate voltage (Vgs) between -2V to 2V, a drain voltage (Vds) up to 50V, and a quiescent current (Idq) of around 100mA. The optimal bias point depends on the specific application and should be determined through characterization and testing.
  • To protect the CGHV40100F from ESD and overvoltage, use ESD protection devices such as TVS diodes or ESD protection arrays. Additionally, ensure that the device is handled and stored in an ESD-safe environment. Overvoltage protection can be achieved using voltage regulators or overvoltage protection circuits.
  • The CGHV40100F has a maximum junction temperature (Tj) of 150°C. For high-temperature operation, derating factors should be applied to ensure reliable operation. A general guideline is to derate the power dissipation by 1% per degree Celsius above 25°C.

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CGHV40100F Overview

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