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CIGT252010EH1R0MNE - SAMSUNG

Description: FIXED IND 1UH 4.1A 30MOHM SMD

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PCB Footprints
CIGT252010EH1R0MNE - SAMSUNG PCB footprint - Inductors Chip - Inductors Chip - 2520
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3D Models
CIGT252010EH1R0MNE - SAMSUNG  - 3D model - Inductors Chip - 2520
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CIGT252010EH1R0MNE Details

  • Manufacturer Part Number:

    CIGT252010EH1R0MNE

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    CHIP, 1008

  • ECCN Code:

    EAR99

  • HTS Code:

    8504.50.80.00

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Samsung Electro-Mechanics

  • YTEOL:

    6

  • Core Material:

    METAL COMPOSITE

  • DC Resistance:

    0.03 Ω

  • Inductance-Nom (L):

    1 µH

  • Inductor Application:

    POWER INDUCTOR

  • Inductor Type:

    GENERAL PURPOSE INDUCTOR

  • JESD-609 Code:

    e3

  • Number of Functions:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Rated Current-Max:

    4.1 A

  • Shape/Size Description:

    RECTANGULAR PACKAGE

  • Shielded:

    NO

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN OVER NICKEL

  • Terminal Placement:

    DUAL ENDED

  • Terminal Shape:

    WRAPAROUND

  • Test Frequency:

    1 MHz

  • Tolerance:

    20%

CIGT252010EH1R0MNE Frequently Asked Questions (FAQs)

  • The recommended soldering temperature profile for the CIGT252010EH1R0MNE is a peak temperature of 260°C for 10-30 seconds, with a ramp-up rate of 3°C/s and a ramp-down rate of 6°C/s.
  • Yes, the CIGT252010EH1R0MNE is designed to withstand high-vibration environments, with a vibration endurance of 10-2000 Hz, 10G acceleration.
  • The MSL of the CIGT252010EH1R0MNE is MSL 3, which means it can withstand exposure to moisture for up to 168 hours at 30°C and 60% relative humidity.
  • Yes, the CIGT252010EH1R0MNE is AEC-Q200 qualified, which means it meets the stringent requirements for use in automotive applications.
  • The ESR of the CIGT252010EH1R0MNE is 0.015 ohms at 100 kHz, which is relatively low and suitable for high-frequency applications.

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CIGT252010EH1R0MNE Overview

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