Part Image

CMF20120D - Wolfspeed

Description: Wolfspeed CMF20120D N-channel SiC MOSFET Transistor, 42 A, 1200 V, 3-Pin TO-247

Download CMF20120D Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
CMF20120D - Wolfspeed PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-3
click to zoom
3D Models
CMF20120D - Wolfspeed  - 3D model - Transistor Outline, Vertical - TO-247-3
click to zoom

CMF20120D Details

  • Manufacturer Part Number:

    CMF20120D

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    2200 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    33 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    78 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

CMF20120D Frequently Asked Questions (FAQs)

  • Wolfspeed recommends a 2-layer or 4-layer PCB with a thermal pad connected to a heat sink or a thermal interface material. A thermal via array under the device can also improve heat dissipation. Refer to the Wolfspeed application note AN-1101 for more details.
  • The CMF20120D requires a bias voltage of 20-30V and a quiescent current of 10-20mA. Ensure the bias circuit is designed to provide a stable voltage and current, and consider using a voltage regulator and current limiter to prevent damage to the device.
  • The CMF20120D is designed to operate with a drive voltage of 0-5V and a load impedance of 50 ohms. Ensure the drive circuit is capable of providing a clean, high-frequency signal, and consider using a 50-ohm termination resistor to prevent signal reflections.
  • Wolfspeed recommends using ESD protection devices, such as TVS diodes or ESD arrays, to protect the CMF20120D from electrostatic discharge. Ensure all handling and assembly procedures follow proper ESD precautions, and consider using an ESD-safe workstation and tools.
  • Wolfspeed performs a range of reliability and qualification tests, including high-temperature operating life (HTOL), temperature humidity bias (THB), and electrostatic discharge (ESD) testing. Refer to the Wolfspeed reliability report for more details on the specific tests and results.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

CMF20120D Overview

Use the download button to access the CMF20120D schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like CMF20, or try a keyword search, such as Power Field-Effect Transistors

Parts related to CMF20120D

Showing 0 results

CMF20120D Alternates

Showing results

Image Part Number Model
Part Image MSC080SMA120B Microchip Technology Inc

Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD

Part Image C2M0080120D Wolfspeed

Power Field-Effect Transistor, 36A I(D), 1200V, 0.098ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

Part Image SCH2080KEC ROHM Semiconductor

Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image SCT2080KEC ROHM Semiconductor

Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

Part Image SCH2080KE ROHM Semiconductor

Power Field-Effect Transistor, 35A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

For a full list of alternate parts for CMF20120D, check out Findchips.com