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CMS45P03H8-HF - Comchip Technology

Description: MOSFET P-CH 30V 9.6A/45A DFN5X6

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CMS45P03H8-HF - Comchip Technology PCB footprint - Other - Other - CMS45P03H8-HF-1
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CMS45P03H8-HF - Comchip Technology  - 3D model - Other - CMS45P03H8-HF-1
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CMS45P03H8-HF Details

  • Manufacturer Part Number:

    CMS45P03H8-HF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    DFN-8

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2019-03-27

  • Manufacturer:

    Comchip Technology Corporation Ltd

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    88 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    9.6 A

  • Drain-source On Resistance-Max:

    0.015 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    237 pF

  • JESD-30 Code:

    R-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CMS45P03H8-HF Frequently Asked Questions (FAQs)

  • The CMS45P03H8-HF can operate from -55°C to 150°C, with a storage temperature range of -55°C to 175°C.
  • To ensure SOA, follow the recommended voltage and current ratings, and avoid operating the MOSFET in the linear region for extended periods. Also, consider the thermal resistance, junction temperature, and power dissipation to prevent overheating.
  • The recommended gate drive voltage for the CMS45P03H8-HF is between 4.5V and 10V, with a maximum gate-source voltage of ±20V.
  • Handle the CMS45P03H8-HF with ESD-sensitive precautions, such as using wrist straps, anti-static bags, and ESD-safe workbenches. Avoid touching the pins or exposing the device to static electricity.
  • The typical turn-on time (tr) is around 10-20 ns, and the typical turn-off time (tf) is around 20-30 ns, depending on the gate drive voltage and circuit conditions.

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