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CPH6442-TL-W - onsemi

Description: Last Shipments - N-Channel Power MOSFET, 60V, 4.5A, 78mΩ

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CPH6442-TL-W - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - LTC6994CS6-1#TRMPBF
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CPH6442-TL-W - onsemi  - 3D model - SOT23 (6-Pin) - LTC6994CS6-1#TRMPBF
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CPH6442-TL-W Details

  • Manufacturer Part Number:

    CPH6442-TL-W

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    CPH-6

  • Package Description:

    SC-74, SOT-26, SOT-457, 6 PIN

  • Manufacturer Package Code:

    318BD

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    ESD PROTECTED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.043 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Bismuth (Sn/Bi)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

CPH6442-TL-W Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure good airflow and avoid thermal hotspots.
  • Use a reflow soldering process with a peak temperature of 260°C (500°F) and a dwell time of 20-30 seconds. Avoid wave soldering and hand soldering.
  • Implement ESD protection devices, such as TVS diodes or ESD arrays, on the input and output lines. Ensure proper PCB layout and grounding to minimize ESD risks.
  • Use X7R or X5R ceramic capacitors with a minimum capacitance of 10 μF and a maximum ESR of 100 mΩ. Ensure the capacitors are placed close to the device and connected with short, low-inductance traces.

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Manufacturer Collaborated
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Community Approved
Sponsored

CPH6442-TL-W Overview

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Part Image CPH6442 SANYO Semiconductor Co Ltd

Power Field-Effect Transistor, 6A I(D), 60V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image CPH6442-TL-E onsemi

Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET