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CSD16301Q2 - Texas Instruments

Description: Texas Instruments CSD16301Q2 N-channel MOSFET Transistor, 5 A, 25 V, 6-Pin SON

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CSD16301Q2 - Texas Instruments PCB footprint - Other - Other - CSD16301Q2-1
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CSD16301Q2 Details

  • Manufacturer Part Number:

    CSD16301Q2

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    6

  • Country Of Origin:

    Mainland China, Malaysia, Philippines, Thailand

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Avalanche Energy Rating (Eas):

    10 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.034 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    17 pF

  • JESD-30 Code:

    R-PDSO-N6

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.3 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD16301Q2 Frequently Asked Questions (FAQs)

  • A good PCB layout for the CSD16301Q2 involves keeping the high-current paths short and wide, using multiple vias for thermal dissipation, and separating the high-frequency and low-frequency circuits. TI provides a recommended PCB layout in the application note SLVA883.
  • To optimize the gate drive circuit, use a low-impedance gate drive circuit with a high-current gate driver, and ensure the gate drive voltage is within the recommended range (e.g., 10-15V). Additionally, use a gate resistor (Rg) value between 1-10 ohms to minimize power losses.
  • The maximum allowed junction temperature for the CSD16301Q2 is 150°C. To ensure you don't exceed it, use a thermal management strategy such as heat sinks, thermal interfaces, and airflow to keep the junction temperature below the maximum rating. Monitor the device temperature using a thermocouple or thermal sensor.
  • Select input and output capacitors with low ESR, high ripple current rating, and a voltage rating that exceeds the maximum input voltage. Use X7R or X5R ceramic capacitors or film capacitors with a capacitance value between 10-100uF. Ensure the capacitors are placed close to the device to minimize parasitic inductance.
  • When paralleling multiple CSD16301Q2 devices, ensure each device has its own gate drive circuit, and the devices are matched in terms of threshold voltage and on-resistance. Use a common gate drive signal and ensure the devices are thermally coupled to prevent thermal runaway. Additionally, use a current-sharing technique such as active current balancing or passive current sharing.

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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