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CSD16323Q3 - Texas Instruments

Description: Texas Instruments CSD16323Q3 N-channel MOSFET Transistor, 60 A, 25 V, 8-Pin SON

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CSD16323Q3 - Texas Instruments PCB footprint - Other - Other - Q3_23
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CSD16323Q3 - Texas Instruments  - 3D model - Other - Q3_23
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CSD16323Q3 Details

  • Manufacturer Part Number:

    CSD16323Q3

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    8

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.0072 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    65 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    74 W

  • Pulsed Drain Current-Max (IDM):

    112 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD16323Q3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the CSD16323Q3 involves keeping the high-current paths short and wide, using multiple vias for heat dissipation, and separating the high-frequency and low-frequency circuits. TI provides a recommended layout in the application note SLVA883.
  • To optimize the gate drive circuit, use a low-impedance gate drive circuit with a high-current gate driver, and ensure the gate drive voltage is within the recommended range (4.5V to 15V). Also, consider using a gate resistor to slow down the switching speed and reduce EMI.
  • The maximum allowed junction temperature for the CSD16323Q3 is 150°C. To ensure you don't exceed it, use a thermal management strategy such as heat sinks, thermal interfaces, and airflow to keep the junction temperature below the maximum rating. Monitor the device temperature using the thermal pad or a thermocouple.
  • Use a voltage supervisor or a voltage monitor to detect overvoltage and undervoltage conditions. Implement a protection circuit that can disconnect the power supply or turn off the device in case of a fault. Also, consider using a TVS diode or a zener diode to clamp the voltage and prevent damage.
  • The recommended operating frequency range for the CSD16323Q3 is up to 1 MHz. Operating at higher frequencies can increase switching losses and reduce the device's efficiency. However, the device can operate at higher frequencies with proper thermal management and gate drive optimization.

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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