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CSD16411Q3 - Texas Instruments

Description: MOSFET N-Ch NexFET Power MOSFETs

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PCB Footprints
CSD16411Q3 - Texas Instruments PCB footprint - Other - Other - Q3_23
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CSD16411Q3 - Texas Instruments  - 3D model - Other - Q3_23
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CSD16411Q3 Details

  • Manufacturer Part Number:

    CSD16411Q3

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    8

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    16 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.015 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    43 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    35 W

  • Pulsed Drain Current-Max (IDM):

    138 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD16411Q3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the CSD16411Q3 should prioritize thermal management by placing thermal vias under the device, using a solid ground plane, and keeping high-current paths short and wide. Additionally, separating analog and digital grounds, and using shielding and filtering can help minimize EMI.
  • To optimize the gate drive circuit, ensure the gate drive voltage is within the recommended range (10-15V), use a low-impedance gate drive circuit, and add a gate resistor to slow down the turn-on and turn-off times to reduce EMI. Also, consider using a gate drive IC or a dedicated gate driver to improve performance.
  • Thermal management is critical for the CSD16411Q3. Ensure good thermal contact between the device and the heat sink, use a heat sink with a high thermal conductivity, and consider using thermal interface materials. Also, keep the ambient temperature within the recommended range (up to 150°C) and ensure good airflow around the device.
  • To protect the CSD16411Q3, use a voltage regulator or a voltage clamp to limit the voltage to the recommended maximum (30V). Add overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Also, consider using a fuse or a PTC resettable fuse to protect against overcurrent conditions.
  • Use a curve tracer or a semiconductor parameter analyzer to characterize the CSD16411Q3. Measure the device's I-V characteristics, threshold voltage, and on-resistance. Use a high-speed oscilloscope to measure the device's switching characteristics and ensure proper gate drive and layout.

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CSD16411Q3 Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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