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CSD17313Q2 - Texas Instruments

Description: MOSFET 30V N Channel NexFET Power MOSFET

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CSD17313Q2 - Texas Instruments PCB footprint - Other - Other - CSD17313Q2-1
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CSD17313Q2 Details

  • Manufacturer Part Number:

    CSD17313Q2

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    8

  • Country Of Origin:

    Mainland China, Malaysia, Philippines, Thailand

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Avalanche Energy Rating (Eas):

    18 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    17 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    17 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD17313Q2 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the CSD17313Q2 is -40°C to 150°C.
  • To ensure proper biasing, connect the gate-source voltage (VGS) to a voltage source that is within the recommended operating range (typically 1.5V to 3.5V) and ensure the drain-source voltage (VDS) is within the recommended operating range (typically 1.5V to 12V).
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces for the drain, source, and gate connections. Avoid using vias or narrow traces, and keep the component placement close to the PCB surface.
  • To protect the CSD17313Q2 from ESD, use ESD-sensitive handling procedures, such as wearing an anti-static wrist strap or using an anti-static mat. Ensure the PCB is properly grounded, and use ESD-protection devices, such as TVS diodes, in the circuit design.
  • The recommended gate drive voltage for the CSD17313Q2 is typically 5V to 10V, depending on the specific application requirements. However, it's essential to consult the datasheet and application notes for specific guidance.

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CSD17313Q2 Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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Part Image CSD17313Q2Q1 Texas Instruments

Power Field-Effect Transistor, 5A I(D), 30V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET