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CSD17577Q3AT - Texas Instruments

Description: MOSFETs 30V NCH NexFET MOSFE T A 595-CSD17577Q3A

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CSD17577Q3AT - Texas Instruments PCB footprint - Other - Other - Q3
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CSD17577Q3AT - Texas Instruments  - 3D model - Other - Q3
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CSD17577Q3AT Details

  • Manufacturer Part Number:

    CSD17577Q3AT

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    39 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.0048 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    103 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    53 W

  • Pulsed Drain Current-Max (IDM):

    239 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD17577Q3AT Frequently Asked Questions (FAQs)

  • A good PCB layout for the CSD17577Q3AT involves keeping the input and output traces separate, using a solid ground plane, and minimizing the length of the input traces to reduce noise and parasitic inductance.
  • To ensure proper biasing, connect the VCC pin to a stable voltage source, and the VBIAS pin to a voltage divider network that sets the desired bias voltage. The recommended bias voltage is typically around 1.2V to 1.5V.
  • The maximum power dissipation of the CSD17577Q3AT is around 1.4W. To avoid exceeding this limit, ensure that the device is operated within the recommended operating conditions, and that the PCB is designed to provide adequate heat dissipation.
  • To troubleshoot issues with the CSD17577Q3AT, start by verifying the input voltage and bias voltage are within the recommended ranges. Check the PCB layout for any signs of noise or parasitic inductance, and ensure that the output is properly decoupled. Use an oscilloscope to measure the output voltage and check for any signs of oscillation.
  • The CSD17577Q3AT is rated for operation up to 125°C. When operating in high-temperature environments, ensure that the device is properly heat-sinked, and that the PCB is designed to withstand the increased thermal stress. Reduce the power dissipation and operating frequency to minimize thermal stress.

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CSD17577Q3AT Overview

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About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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Part Image CSD17577Q3A Texas Instruments

Power Field-Effect Transistor, 35A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET